●Advanced Process Technology
●Ultra Low On-Resistance
●Dynamic dv/dt Rating
●175 degree Operating Temperature
●Fast Switching
●Fully Avalanche Rated
●Lead-Free
Opis
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
TO-220 paket je univerzalno poželjan za sve komercijalno-industrijske aplikacije na razinama rasipanje snage do približno 50 vata. Niska toplinska otpornost i niska cijena pakiranja TO-220 doprinose njegovom širokom prihvaćanju u cijeloj industriji.

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